Silicon nanostructures of various morphologies have been produced by laser beam due to the localized heating established by the beam. Two lasers were employed, the first was Nd:YAG pulsed laser to synthesize silicon films constituting silicon nanoparticles. The second laser CW laser to produce silicon nanostructures by laser annealing .Various laser parameters were examined to study their effect on the film properties such as laser power density and annealing time. We have studied the optical properties and film morphology of the annealed films. Optical properties included the transmission, and photoluminescence. While Scanning Electron Microscopy, Atomic Force Microscopy and Optical microscopy were used to monitor changes in the structure of silicon thin films which involves surface morphology and mean roughness of the prepared samples. Our experimental data have been fitted with the theoretical quantum confinement model to analyze the photoluminescence curves and estimate the nanoparticle sizes and their distribution. From the optical transmission studies, we found that the band gap of the nanostructured films lies between (2.4 – 2.5) eV due to the existence of various nanoparticle sizes in the deposited film. Furthermore, the photoluminescence (PL) spectra indicate that the estimated band gap lies between (2.3 – 2.8) eV. The corresponding nanoparticle sizes contributing to the PL emission are in the range (2.2 – 3.8) nm. Finally, it was observed that the film morphology is significantly affected by the laser intensity and the annealing time. Therefore, one could prepare various films suitable for different applications.